Narrow Bandgap Semiconductor Based THz-Emitters

Ingrid Wilke; Suranjana Sengupta; Partha S. Dutta

doi:10.1364/CLEO_AT.2011.JThB107

CLEO:2011 - Laser Applications to Photonic Applications
OSA Technical Digest (CD) (Optica Publishing Group, 2011),
paper JThB107
•https://doi.org/10.1364/CLEO_AT.2011.JThB107

Narrow Bandgap Semiconductor Based THz-Emitters

Ingrid Wilke, Suranjana Sengupta, and Partha S. Dutta

CLEO: Science and Innovations 2011

Baltimore, Maryland United States
1–6 May 2011
ISBN: 978-1-55752-910-7

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Nonlinear and Quantum Science and Measurements Joint Poster Session (JThB)

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I. Wilke, S. Sengupta, and P. S. Dutta, "Narrow Bandgap Semiconductor Based THz-Emitters," in CLEO:2011 - Laser Applications to Photonic Applications, OSA Technical Digest (CD) (Optica Publishing Group, 2011), paper JThB107.

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Abstract

The emission of terahertz (THz)-radiation pulses from binary and ternary narrow bandgap semiconductors is discussed. Ga_xIn_1−xAs:Fe is a THz-emitter material for time-domain THz systems with potentially ≈1mW of average THz-radiation power at MHz repetition rates.

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