Abstract
Heavily implanted MQW structures have not been examined as a function of applied bias in a pin geometry. Such studies address the interesting physical question of whether phenomena such as sharp excitons and quantum confined stark effect (QCSE), normally associated with ultra-clean material can persist amid the controlled introduction of defects.[1] We have studied several such MQW pin samples, each of which was grown on a quarter-wave dielectric reflecting stack mirror consisting of Al0.11Ga0.89As and AlAs layers. Devices contained 60 periods of GaAs quantum wells 100 Å thick with 60 Å AlxGa1-xAs barriers having mole fractions of x=0.3, 0.45, and 1.0. Devices were implanted with roughly 130 keV protons, focusing the damage into the intrinsic regions, to dose levels of 1 × 1012cm−2, 1 × 1013cm−2, and 1 × 1014cm−2. Large-area mesa devices were then fabricated from these structures via standard lithographic techniques. We have previously reported the behavior of x=0.3 barrier samples.[2]
© 1993 Optical Society of America
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