Abstract
The ratio of heavy-hole to light-hole interband transition energy shifts as a function of strain can be used to determine the strain configuration of semiconductor devices or structures for a wide range of strains.
© 2006 Optical Society of America
PDF ArticleMore Like This
Mark L. Biermann, Steven Duran, Jens W. Tomm, Axel Gerhardt, and Dirk Lorenzen
CTuP3 Conference on Lasers and Electro-Optics (CLEO:S&I) 2004
Daniel C. Bertolet, Jung-Kuei Hsu, and Kei May Lau
TuE7 Quantum Wells for Optics and Opto-Electronics (QWOE) 1989
Yoon-Kyu Song, Hyunjin Kim, Tolga Atay, William R. Patterson, Arto V. Nurmikko, Maria Gherasimova, Kyung K. Kim, and Jung Han
CTuE1 Conference on Lasers and Electro-Optics (CLEO:S&I) 2006