Abstract
The investigation of hot carriers in ternary quantum well structures is of fundamental physical interest and of importance for the design of semiconductor devices, e.g. in optical communication systems. Recently, the cooling of hot carriers in undoped Ga0.47In0.53As/In0.48Al0.52As multiple-quantum- wells (BSWs) has been studied in picosecond photoluminescence experiments with a temporal resolution of 15 ps /1/.A MQW sample consisting of thin quantum wells with a single subband occupied by electrons sis well as by holes was investigated.
© 1988 Optical Society of America
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