Abstract
The heavy hole exciton in GaAs/AlGaAs multiple quantum wells is inhomogeneously broadened due in large part to well width fluctuations. Because of the inhomogeneous broadening, a measurement of the absorption profile is a convolution of the natural exciton profile and the inhomogeneous broadening distribution. That is to say, if f (ω-ω) is the lineshape of the heavy hole exciton centered at frequency ωo, then the measured aborption profile is proportional to ∫P (ωo) f (ω-ωo) dωo where P(ωo) is the probability of the exciton resonance being centered at ωo In the absence of additional information, it is difficult to obtain detailed information regarding the fora of f (ω-ωo). Furthermore, in the usual case, the width associated with f (ω-ωo) is usually much smaller than the width associated with the distribution function. Hence, it usually becomes necessary to resort to alternative optical methods for measurement.
© 1988 Optical Society of America
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