Abstract
We present an analysis and a detailed characterization of the output of passive semiconductor based optical limiters. These devices utilize two-photon absorption along with photogenerated carrier defocusing within the material to limit the output fluence and irradiance.1 In addition to protecting downstream optical components, the focusing geometry combined with these nonlinearities make the devices self-protecting. These devices can be made to have low limiting thresholds, large dynamic ranges, and broad spectral responses. For example, using ZnSe, limiting at inputs as low as 10nJ (300W) has been achieved with a dynamic range greater than 104 for 0.53μm, 30ps (FWHM) pulses. Using 10ns input pulses at the same wavelngth in ZnSe we have observed limiting input powers as low as 80 Watts.2
© 1988 Optical Society of America
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