Abstract
The optical constants of molten silicon are not as well known as those of solid silicon. We are aware of one cw ellipsometric measurement of the dielectric function ∈ for molten Si around the visible1 and 1-ns time-resolved ellipsometric measurement of ∈ at 633 nm during pulsed excimer laser irradiation.2 With shorter pulses, there should be no problem associated with surface contamination, and it may even be possible to measure ∈ during superheating.
© 1987 Optical Society of America
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