Abstract
Monolithic integration of passive waveguides with double heterostructure (DH) lasers has the potential for a number of interesting device applications, including lasers with distributed Bragg reflectors or integrated external cavities, intensity or frequency modulators, and mode-locked DH lasers. Previous attempts to achieve this structure with GaAs/GaAlAs or GaInAsP/InP systems resulted in relatively high threshold current densities.(1-6) We have developed in this work a liquid-phase epitaxial (LPE) technique to grow DH Passive waveguides integrated with and precisely aligned to previously grown DH laser structures. Uniform waveguide layers and good surface morphology have been achieved in the LPE regrowth. Relatively low threshold current densities (2.4 - 3.1 kA/cm2) were obtained for broad area lasers with one integrated passive waveguide section.
© 1982 Optical Society of America
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