Abstract
We report MBE growth of AlGaN structures emitting below 250 nm on SiC substrates. We found that the IQE of the MQWs and DHs is as high as 68% and 43% respectively.
© 2011 Optical Society of America
PDF ArticleMore Like This
Ramón Collazo, Seiji Mita, Jinqiao Xie, Anthony Rice, James Tweedie, Rafael Dalmau, Baxter Moody, Raoul Schlesser, Ronny Kirste, Axel Hoffmann, and Zlatko Sitar
CTuU2 CLEO: Science and Innovations (CLEO:S&I) 2011
Chen-Kai Kao, Yitao Liao, Christos Thomidis, Adam Moldawer, Dipesh Bhattarai, Haiding Sun, and Theodore D. Moustakas
CTuU4 CLEO: Science and Innovations (CLEO:S&I) 2011
J. Lu, Y. Zhong, and S. Zhao
PvM2G.2 Optical Devices and Materials for Solar Energy and Solid-state Lighting (SOLED) 2020