Abstract
We present the modeling and the experimental result of a micro-machined VCSEL with a thermally actuated semiconductor/SiO2 cantilever structure. The modeling result shows a giant wavelength-temperature dependence of over 3.5 nm/K. The fabricated device exhibits a temperature dependence of 0.79 nm/K, which is 10 times larger than that of conventional VCSELs.
© 2011 Optical Society of America
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