Abstract
The technique of high-energy ion irradiation is an interesting alternative to low-temperature epitaxy for reducing the absorption relaxation time in semiconductor materials. The possibility of creating defects of particular structures by heavy-ion irradiation was suggested as early as in 1980, but experimental works[1] only gave indirect indications of this possibility. To our knowledge, there are no comparative measurements of irradiated materials directly showing the particular properties of heavy-ion irradiation for applications to fast and efficient saturable absorbers.
© 1998 IEEE
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