Abstract
The lower average atomic number strained GaNxAs1-x(x = 0.029 and 0.045) and Si1-yCy (y ≤ 0.015) films were found to be brighter than the higher average atomic number GaAs and Si in annular dark field (ADF) images.
© 2009 IEEE
PDF ArticleMore Like This
Zhangda Lin, Jie Yang, Kean Feng, and Yan Chen
DGGC321 Applications of Diamond Films and Related Materials (DFM) 1995
Yijie Huo, Hai Lin, Yiwen Rong, Maria Makarova, Theodore I. Kamins, Jelena Vuckovic, and James S. Harris
CPDB7 Conference on Lasers and Electro-Optics (CLEO:S&I) 2009
Suvranta K. Tripathy, Guibao Xu, Xiaodong Mu, Yujie J. Ding, M. Jamil, Ronald A. Arif, Nelson Tansu, and Jacob B. Khurgin
IWD3 International Quantum Electronics Conference (IQEC) 2009