Abstract
We demonstrate the first LEDs at 1.3-1.5μm using GaAs deep-centers having higher (70%) efficiencies, lower absorption loss, more temperature-insensitive luminescence, larger Einstein B-coefficient than bulk InGaAs. This is an enabling technology.
© 2007 Optical Society of America
PDF ArticleMore Like This
Janet L. Pan
CE3_1 The European Conference on Lasers and Electro-Optics (CLEO/Europe) 2007
C. Wetzel
PWB4 Photonic Applications Systems Technologies Conference (CLEO:A&T) 2007
S.-Q. Yu, N. Rider, D. Ding, J.-B. Wang, S. R. Johnson, and Y.-H. Zhang
JWA57 Conference on Lasers and Electro-Optics (CLEO:S&I) 2007