Abstract
Ultrafast photonic sampling is a powerful technique for characterization of electron transport in high-speed devices. The devices need to be connected with photonic sampling circuits that are capable of transmitting ultrashort electric pulses. Hybrid integration method has been widely taken to satisfy this requirement. A conventional electron device such as high-electron- mobility field-effect transistor (FET), for example, has been mounted on and wire- bonded to a high-frequency waveguide circuit incorporated with ultrafast photoconductive switches (PCSs).1 In this paper, we have employed an alternative method, monolithic integration of an electron device and a photonic sampling circuit. Impedance mismatching, parasitic inductance and capacitance are eliminated in this novel integration method. No internal reflection of high-speed signals and ultimately high time resolution are thus expected in ultrafast photonic sampling.
© 1994 Optical Society of America
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