Abstract
Pulsed laser irradiation is employed over a wide spectrum of materials processing applications, such as surface hardening, alloying, curing, and synthesis of compound and superconductor films. Interactions of pulsed laser irradiation with matter may lead to controlled phase change transformations and material structure modifications. In semiconductor systems, it is used to anneal ion-implantation surface damage, recrystallize amorphous and polycrystalline films, and enhance dopand diffusion. Both experimental and computational investigations of pulsed laser interactions with semiconductor materials have been performed. Time-of-flight method,1 transient conductance measurements,2,3 nanosecond-resolution x-ray diffraction measurements,4 and time-resolved reflectivity measurements5 have been applied to obtain quantities such as surface temperature, melt penetration, melt-duration times and melt-front velocities. Numerical heat transfer computations were used to indirectly obtain the transient temperature field. All the above experimental results were interpreted by numerical simulations to show that the pulsed laser irradiation of semiconductors in the nanosecond time regime is a thermal phenomenon.
© 1994 Optical Society of America
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