Abstract
Due to surface emission geometry and compact size, vertical cavity surface emitting laser diodes1-4 are natural and attractive for implementation of 2-D array light sources. Here we report the fabrication of arrays of 5 × 5 GaAs/AlGaAs vertical cavity surface emitting lasers with emission wavelength near 0.87-0.88 μm. The arrays had an individual laser mesa diameter of 10 μm and a center-to-center separation of 25 μm. The vertical cavity lasers contained an Al0.3Ga0.7As/GaAs(0.5μm)/Al0.3Ga0.7As double heterostructure active region sandwiched between an w-type eighteen-pair Al0.1Ga0.9As/AlAs quarterwave stack Bragg reflector on the substrate side and six-pair p-type Al0.1Ga0.9As/Ai0.7Ga0.3As quarter-wave stacks.
© 1990 Optical Society of America
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